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1024-Bit EEPROM iButton
Note 19: Current drawn from IO during the EEPROM programming interval. The pullup circuit on IO during the programming interval
should be such that the voltage at IO is greater than or equal to V PUPMIN . If V PUP in the system is close to V PUPMIN , a low-
impedance bypass of R PUP , which can be activated during programming, may need to be added.
Note 20: Interval begins t REHMAX after the trailing rising edge on IO for the last time slot of the E/S byte for a valid Copy Scratchpad
sequence. Interval ends once the device’s self-timed EEPROM programming cycle is complete and the current drawn by
the device has returned from I PROG to I L .
Note 21: Write-cycle endurance is degraded as T A increases.
Note 22: Not 100% production tested; guaranteed by reliability monitor sampling.
Note 23: Data retention is degraded as T A increases.
Note 24: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the
data sheet limit at operating temperature range is established by reliability testing.
Note 25: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-term storage at elevated tem-
peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.
COMPARISON TABLE
LEGACY VALUES
DS1972 VALUES
PARAMETER
STANDARD SPEED
(μs)
OVERDRIVE SPEED
(μs)
STANDARD SPEED
(μs)
OVERDRIVE SPEED
(μs)
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
t SLOT (including t REC )
t RSTL
t PDH
t PDL
t W0L
61
480
15
60
60
(undefined)
(undefined)
60
240
120
7
48
2
8
6
(undefined)
80
6
24
16
65*
480
15
60
60
(undefined)
640
60
240
120
8*
48
2
8
6
(undefined)
80
6
24
15.5
*Intentional change; longer recovery time requirement due to modified 1-Wire front-end.
Note: Numbers in bold are not in compliance with legacy 1-Wire product standards.
4
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相关代理商/技术参数
DS1972-F5
制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit EEPROM iButton
DS1972-F5#
功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1972-F5+
功能描述:iButton 1024-Bit EEPROM iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
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制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4-kbit EEPROM iButton
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制造商:Maxim Integrated Products 功能描述:EEPROM SERL-1WIRE 4KBIT 16PAGES X 256 3.3V/5V F3 CA - Rail/Tube
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制造商:Maxim Integrated Products 功能描述:IC MEMORY I BUTTON 1973
DS1973-F3
功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated
DS1973-F3#
功能描述:iButton
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